电子学报Issue(9)：1859-1863,5.DOI:10.3969/j.issn.0372-2112.2015.09.026
Ku 波段宽带氮化镓功率放大器 MMIC
Ku Band Power Amplifier MMlC Based on GaN HEMT Technology
余旭明 1洪伟 2王维波 1张斌3
作者信息
- 1. 东南大学毫米波国家重点实验室，江苏南京，210096
- 2. 单片集成电路与模块国家重点实验室，江苏南京，210016
- 3. 单片集成电路与模块国家重点实验室，江苏南京，210016
- 折叠
摘要
Abstract
A three stage Ku band GaN power amplifier MMIC was developed with 0.25μm GaN HEMT technology.The MMIC was designed in micro-strip technology.Based on the large signal model,the amplifier adopted reactance matching network to reduce the insertion loss of the output stage,which improved its associated efficiency.The measurement results exhibited that this amplifier provided a flat small signal gain of 30dB and a pulsed saturated output power of 15W at the drain voltage of 28V over the 14.6 ~18GHz frequency range.At 14.8 GHz,a peak output power of 19.5W with power added efficiency of 39% was achieved.关键词
氮化镓/功率放大器/微波集成电路/Ku 波段Key words
GaN HEMT/power amplifier/MMIC/Ku-band分类
信息技术与安全科学引用本文复制引用
余旭明,洪伟,王维波,张斌..Ku 波段宽带氮化镓功率放大器 MMIC[J].电子学报,2015,(9):1859-1863,5.
