发光学报Issue(10)：1171-1177,7.DOI:10.3788/fgxb20153610.1171
在c-面蓝宝石上控制生长高质量的ZnO单晶薄膜
Controllable Growth of High Quality ZnO Thin Film on c-sapphire
摘要
Abstract
High quality ZnO thin film was obtained on c-sapphire substrate by using a technique of plasma assisted molecular beam epitaxy ( P-MBE ) , in which MgO and low temperature ZnO are used as buffer layers. High-resolution XRD measurement shows the full width at half maximum (FWHM) of (002) and (102) are only 68. 4 and 1 150 arcsec, respectively. In the meantime, atomically smooth surface with root mean square (RMS) surface roughness of 0. 842 nm is realized. In addition, Raman and photoluminescence ( PL) measurements show that ZnO layer has extremely low stress level and defect density. The realization of high quality ZnO thin film pays a good way for the application of ZnO-based optoelectronic devices.关键词
缓冲层/应力/缺陷/ZnO/高质量薄膜Key words
buffer/stress/defects/ZnO/high quality thin film分类
数理科学引用本文复制引用
张权林,苏龙兴,吴天准,王玉超,祝渊,陈明明,桂许春,汤子康..在c-面蓝宝石上控制生长高质量的ZnO单晶薄膜[J].发光学报,2015,(10):1171-1177,7.基金项目
“973”国家基础科学研究计划(2011CB302000) （2011CB302000）
国家自然科学基金(51232009,51202299)资助项目 （51232009,51202299）
