发光学报2015，Vol.36Issue(11)：1252-1257,6.DOI:10.3788/fgxb20153611.1252
InAs/GaInSb超晶格薄膜结构与电学性能
Structure and Electrical Properties of InAs/GaInSb Superlattice Film
陈道明 1国凤云 2张新建 2白贵元 1赵连城1
作者信息
- 1. 中国工程物理研究院 材料研究所,四川 江油 621907
- 2. 哈尔滨工业大学 材料科学与工程学院,黑龙江 哈尔滨 150001
- 折叠
摘要
Abstract
InAs/GaInSb superlattice material was grown on (001)GaAs substrates by molecular beam epitaxy ( MBE) , adjusting the growth temperature and Ⅴ/Ⅲ beam ratio. The results show that the growth temperature is in the range of 385 ℃ and 395 ℃, the Ⅴ/Ⅲ beam ratio is from 5. 7:1 to 8. 7:1. RHEED situ observations to the GaAs layer (4 × 2),GaSb layer (1 × 3) and InAs layer (1 × 2) show clarity reconstructed diffraction fringes, the quality of superlattice structure is better,and with increasing temperature, the carrier concentration and mobility of the material are increased.关键词
InAs/GaInSb/超晶格薄膜/分子束外延Key words
InAs/GaInSb/superlattice film/molecular beam epitaxy分类
数理科学引用本文复制引用
陈道明,国凤云,张新建,白贵元,赵连城..InAs/GaInSb超晶格薄膜结构与电学性能[J].发光学报,2015,36(11):1252-1257,6.
