发光学报2015，Vol.36Issue(11)：1289-1293,5.DOI:10.3788/fgxb20153611.1289
热裂解活化硒对CIGS太阳电池开路电压的影响
Influence of Thermal Cracking Selenium on The Open-circuit Voltage of CIGS Solar Cells
摘要
Abstract
The influence of cracking selenium on the structure and device parameters of Cu(In1-xGax)-Se2 ( CIGS) thin films was investigated. The activity of cracked selenium can be controlled by mod-erating the temperature of thermal cracking system employed in our self-designed selenization fur-nace. The HC-Se atmosphere can enhance the Ga concentration on the film surface and increase the band-gap energy of the CIGS film surface. In addition, HC-Se atmosphere can alleviate the "phase separation". Consequently, Voc value of the solar cell increases about 34. 6%. The device conver-sion efficiency using the novel thermal-cracking system increases by about 45 . 5% from 6 . 02% to 8 . 76%.关键词
CIGS/热裂解活化硒/开路电压Key words
CIGS/thermal-cracking selenium/open-circuit voltage分类
数理科学引用本文复制引用
李光旻,刘玮,林舒平,李晓东,周志强,何青,张毅,刘芳芳,孙云..热裂解活化硒对CIGS太阳电池开路电压的影响[J].发光学报,2015,36(11):1289-1293,5.基金项目
国家自然科学基金(61076061)资助项目 （61076061）
