发光学报2015，Vol.36Issue(11)：1311-1319,9.DOI:10.3788/fgxb20153611.1311
PLD制备的Cu掺杂SnS薄膜的结构和光学特性
Structure and Optical Properties of Cu-doped SnS Thin Films Prepared by PLD
摘要
Abstract
Cu doped SnS thin films were grown on the glass substrates by pulsed laser deposition. The targets were pressed by the mixture of SnS and Cu2 S powder ( Cu and Sn molar ratios were 0%, 2. 5%, 5%, 7. 5%, and 10%, respectively). The effects of Cu doping content on the microstruc-tural, morphological, optical and electrical properties of SnS thin films were studied by X-ray dif-fraction (XRD), laser Raman spectrometry, atomic force microscopy (AFM), ultraviolet-visible-near infrared spectrophotometer ( UV-Vis-NIR ) , and Keithley 4200-SCS semiconductor parameter analyzer. The results show that the films grow preferentially oriented in (111) plane, and SnS:5%Cu film has the excellent crystalline and Raman characteristic peaks. With the increasing of Cu doping content, the average particle sizes of the films increase. The absorption coefficient of the film in the visible region is the order of 105 cm-1 for different Cu doping content. The direct band gap of SnS:5%Cu film is 2. 23 eV, and the ratio of photo-conductivity to dark-conductivity is 2. 59. Finally, p-SnS:Cu/n-ZnS heterojuction device was fabricated on the glass substrate. The device exhibits good rectifying behaviors in dark and under illumination, and weak photovoltaic properties.关键词
SnS薄膜/脉冲激光沉积/Cu掺杂/异质结器件Key words
SnS thin film/pulsed laser deposition/Cu-doping/heterojuction device分类
信息技术与安全科学引用本文复制引用
刘磊,余亮,李学留,汪壮兵,梁齐..PLD制备的Cu掺杂SnS薄膜的结构和光学特性[J].发光学报,2015,36(11):1311-1319,9.基金项目
国家自然科学基金(51272061)资助项目 （51272061）
