发光学报Issue(12)：1452-1457,6.DOI:10.3788/fgxb20153612.1452
磁控反应溅射AlN缓冲层对GaN基LED器件性能的影响
Effect of AlN Buffer Layer Prepared by Reactive Magnetron Sputtering on GaN-based LEDs
农明涛 1苗振林 1梁智勇 1周佐华 1蔡炳杰 1卢国军 1林传强 1张宇1
作者信息
- 1. 湘能华磊光电股份有限公司，湖南 郴州 423000
- 折叠
摘要
Abstract
AlN films were prepared on patterned sapphire substrates ( PSS) by direct-current reac-tive magnetron sputtering ( RMS) and used as buffer layers. The crystal quality and optical proper-ties of GaN films grown by metal-organic chemical vapor deposition ( MOCVD) with AlN buffer lay-ers were investigated. Compared with conventional low temperature GaN buffer layers, the RMS AlN buffer layers have smoother and smaller nucleation islands, which benefits the lateral growth and the coalesce of three-dimensional GaN islands. It is found that GaN-based LEDs with RMS AlN buffer layers have higher light output power, lower electric leakage and stronger electrostatic discharge ( ESD) characteristic owning to the lower threading dislocation density ( TDD) .关键词
直流磁控反应溅射/氮化铝缓冲层/氮化镓基发光二极管/金属有机化学气相沉积Key words
direct-current reactive magnetron sputtering/AlN buffer layer/GaN-based LEDs/metal-organic chemi-cal vapor deposition分类
信息技术与安全科学引用本文复制引用
农明涛,苗振林,梁智勇,周佐华,蔡炳杰,卢国军,林传强,张宇..磁控反应溅射AlN缓冲层对GaN基LED器件性能的影响[J].发光学报,2015,(12):1452-1457,6.
