哈尔滨工程大学学报2015，Vol.36Issue(10)：1409-1412,4.DOI:10.11990/jheu.201407016
铟掺杂近化学计量比铌酸锂单晶的缺陷结构
Defect structure of near-stoichiometric LiNbO3 crystals doped with indium
摘要
Abstract
In order to investigate the occupation mechanism of anti-photo-damage media in the near-stoichiometric LiNbO3 crystals, the near-stoichiometric In:LiNbO3( In:SLN) crystals with different indium contents were grown by the top seed solution growth ( TSSG) method. The defect structure evolution was derived from the X-ray powder dif-fraction, differential thermal analysis ( DTA ) , ultraviolet-visible ( UV ) absorption and infrared ( IR ) spectrum measurement. The analysis implies that the threshold concentration of In2 O3 in near-stoichiometric LiNbO3 crystals was between 1% and 1.5%. The investigation of defect structure indicates that In3+ions first replace Nb4+Li to obtain In2+Li ions when the doping content of In2 O3 is less than the threshold concentration. Conversely, In3+ ions begin to occupy normal Li and Nb sites to obtain In2+Li-In2-Nb compensation structure when the In2 O3 doping content is more than the threshold concentration.关键词
铌酸锂晶体/近化学计量比/缺陷结构/取代机理/阈值/铟Key words
LiNbO3 crystals/near-stoichiometric/defect structure/replacement principle/threshold/indium分类
数理科学引用本文复制引用
方双全,黄新,马德才,张贺新..铟掺杂近化学计量比铌酸锂单晶的缺陷结构[J].哈尔滨工程大学学报,2015,36(10):1409-1412,4.基金项目
国家自然科学基金资助项目(11372361) （11372361）
扬州大学科技创新培育基金资助项目(2013CXJ020). （2013CXJ020）
