化工进展Issue(11)：3979-3984,4000,7.DOI:10.16085/j.issn.1000-6613.2015.11.024
分子吸收光谱在半导体薄膜化学气相沉积中的应用
Applications of molecular absorption spectrum on semiconductor CVD growth
摘要
Abstract
In the chemical vapor deposition (CVD) of the compound semiconductor thin film process, measurement of gas concentrations is crucial to the understanding of reaction mechanism. UV-visible absorption spectrum (UVAS) and infrared spectrum (IR) are the main methods to measure gas concentrations,and used forin situ measurement of gas concentrations. CVD measurements system of UVAS and its applications on measuring concentrations of groupⅢ—Ⅴ gases are introduced, including absorption characteristics of metal organic materials etc. and applications of UVAS on mechanism of InN and GaN growth processes at different temperatures and pressures. Finally, applications of IR spectrum is introduced,including analysis of gas-phase reaction between TMG and NH3 under different conditions,analysis of SiC thin film compositions,and determinination of gas phase reaction rate for GaN growth process.关键词
化学气相沉积/气体浓度/紫外-可见吸收光谱/红外光谱Key words
chemical vapor deposition/gas concentration/UVAS/IR分类
信息技术与安全科学引用本文复制引用
汪文鹄,左然,刘鹏,童玉珍,张国义..分子吸收光谱在半导体薄膜化学气相沉积中的应用[J].化工进展,2015,(11):3979-3984,4000,7.基金项目
国家自然科学基金（61176009，61474058）、国家重点基础研究发展计划（2011CB013101）、国家高技术研究发展计划（2014AA032605）及国家自然科学基金重大仪器装备专项（61327801）。 （）
