红外技术Issue(6)：319-324,6.
透射式GaAs光电阴极荧光谱特性研究
Study on Fluorescence of Transparent GaAs Cathode
摘要
Abstract
The fluorescence spectra of transparent GaAs photocathode of four layer, two layer structure assembly and the third generation image intensifier are measured. The wavelengths of the exciting light are respectively 514.5 nm and 785 nm. The measurement results show that the peak wavelength of fluorescence spectrum of the GaAs epitaxial layer is longer than that of GaAs substrate fluorescence. When the cathode of GaAs four-layer structure assembly were made into two-layer structure assembly, peak wavelength of fluorescence of GaAs emission layer shifts toward the long wavelength. After the GaAs cathode of two-layer structure assembly was thinner and activated by Cs-O, the peak wavelength of fluorescence of GaAs cathode emissive layer shifted to short wavelength direction. While the third generation image intensifier GaAs cathode assembly is in the production process, the major cause of its peak wavelength variation of fluorescence spectrum is the internal lattice strain of GaAs emission layer, so when the four layers of the GaAs photocathode was made into two layers, due to changes in GaAs emission layer internal lattice strain state, the peak wavelength of fluorescence spectra is moved to long wavelength direction. After thinning, heat cleaning and activation to the two layers of the GaAs emission layer, due to internal stress release, strain can be eliminated to a certain extent, so the peak wavelength of GaAs fluorescence emission layer is shifted to short wavelength direction. Typically, the fluorescent spectrum of GaAs material is a Gauss curve, but the GaAs cathode assembly of the third generation image intensifier, when in the presence of no uniform lattice strain of GaAs emission layer, the fluorescence spectrum curves in the peak will occur near the irregular shape, and when the lattice strain in homogeneity is eliminated, fluorescence spectral curve will be restored to the normal shape. The strain of the GaAs emissive layer will be reflected by fluorescence spectrum, so in the process of making GaAs photocathode, in addition to measuring the integrated fluorescence of GaAs photocathode, the peak wavelength change of GaAs fluorescent spectrum can also be measured in order to monitor GaAs photocathode process.关键词
像增强器/GaAs光电阴极/荧光谱/晶格应变/应力Key words
image intensifier/GaAs photocathode/fluorescence spectrum/lattice strain/stress分类
数理科学引用本文复制引用
李晓峰,石峰,冯刘..透射式GaAs光电阴极荧光谱特性研究[J].红外技术,2013,(6):319-324,6.基金项目
微光夜视技术重点实验室基金，编号J2011016。 （）
