红外技术Issue(6)：364-367,4.
基于二种载流子体系的HgCdTe材料的霍尔电压与载流子浓度关系
The Relations between Hall Voltage and Carrier Concentration of Two Kinds of Carrier Conduction System for HgCdTe
彭曼泽 1李东升 1李秋妍 1田立萍 1吴刚1
作者信息
- 1. 昆明物理研究所，云南 昆明 650223
- 折叠
摘要
Abstract
Formula and curve of hall voltage and carrier concentration p/n are derived from hall coefficient formula of two kinds of carrier conduction system . Relations between hall voltage and conduction type of the material for a series of p/n values are analysed. The range of the hole concentration are defined, which is adapted to hall coefficient formula of single carrier conduction system or two kinds of carrier conduction system.关键词
霍尔系数/霍尔电压/载流子体系/载流子浓度Key words
hall coefficient/hall voltage/carrier conduction system/carrier concentration分类
信息技术与安全科学引用本文复制引用
彭曼泽,李东升,李秋妍,田立萍,吴刚..基于二种载流子体系的HgCdTe材料的霍尔电压与载流子浓度关系[J].红外技术,2013,(6):364-367,4.
