红外技术Issue(10)：868-872,5.
中波碲镉汞/钝化层界面电学特性研究
A Study of Interface Electrical Characteristics for MW HgCdTe/Passivation Layer
摘要
Abstract
The HgCdTe surface/interface property plays an important role in HgCdTe based photodiodes, and strongly depends on surface treatment and surface passivation. The LPE HgCdTe surface is etched with bromine in methanol (Br2/CH3OH), followed by sputtering of the CdTe/ZnS composite film as the surface passivation for HgCdTe. MIS devices with ZnS/CdTe double passivation layers are fabricated and characterized. The results show that the polarity of fixed interface charge is positive and interface charge density is 2.1×1011 cm-2, the minimum magnitude of interface state is 1.43×1011cm-2·eV-1, and the slow interface density is 4.75×1011 cm-2 under the gate bias extreme of 10 V. The relatively low density of interface state indicates that CdTe/ZnS composite passivation technique is advantaged.关键词
中波碲镉汞/表面钝化/MIS 器件/C-VKey words
MW HgCdTe/surface passivation/MIS device/C-V分类
信息技术与安全科学引用本文复制引用
李雄军,韩福忠,李东升,李立华,胡彦博,孔金丞,朱颖峰,庄继胜,姬荣斌..中波碲镉汞/钝化层界面电学特性研究[J].红外技术,2015,(10):868-872,5.基金项目
国防973项目，编号613230；云南省创新团队计划，编号2014HC020。 （）
