情报杂志Issue(11)：62-68,149,8.DOI:10.3969/j.issn.1002-1965.2015.11.012
基于专利的氧化锌宽禁带半导体材料技术中外比较
Comparison of Zinc Oxide Wide Band Gap Semiconductor Material Technology in China and Foreign Countries Based on the Patent
摘要
Abstract
Using patent analysis, this paper compares zinc oxide wide band gap semiconductor material industry in China and foreign countries from R&D strength, technical field, patent originality and generality. According to the analysis of comprehensive competition sta-tus of main countries, we found some problems in China:China's patent growth rate will continue to improve, but the technology is rela-tive backward with less high quality patents and lower competitiveness in R&D institutions. At last, based on a SWOT analysis conducted, some countermeasures to enhance the innovation of the industry in question are given.关键词
氧化锌/宽禁带半导体材料/专利分析/中外比较Key words
zinc oxide/wide band gap semiconductor material/patent analysis/contrastive analysis分类
社会科学引用本文复制引用
吴菲菲,张亚茹,黄鲁成,苗红..基于专利的氧化锌宽禁带半导体材料技术中外比较[J].情报杂志,2015,(11):62-68,149,8.基金项目
国家社会科学基金重大项目“新兴技术未来分析理论方法与产业创新研究”(编号:11&ZD140)。 （编号:11&ZD140）
