强激光与粒子束2011，Vol.23Issue(2)：545-549,5.DOI:10.3788/HPLPB20112302.0545
伽玛辐照对SiGe异质结双极型晶体管的
Gamma irradiation effects on collector current and Early voltage of SiGe heterojunction bipolar transistor
摘要
关键词
异质结双极型晶体管/自建电势/掺杂浓度/集电极电流/厄尔利电压/伽玛辐照Key words
heterojunction bipolar transistor/built-in electric potential/doping concentration/col-lector current/Early voltage/gamma irradiation分类
信息技术与安全科学引用本文复制引用
温景超,石瑞英,龚敏,唐龙谷,田野,谭开州,蒲林..伽玛辐照对SiGe异质结双极型晶体管的[J].强激光与粒子束,2011,23(2):545-549,5.基金项目
Supported by National Laboratory of Analog Integrated Circuits of China (51439040105SC02) （51439040105SC02）
