无机材料学报Issue(10)：1056-1062,7.DOI:10.15541/jim20150118
尖晶石型CuAl2O4掺杂对CaCu3Ti4O12陶瓷介电性能的影响
Influences of CuAl2O4 Doping on the Dielectric Properties of CaCu3Ti4O12 Ceramics
摘要
Abstract
The influences of CuAl2O4 doping on the microstructure and dielectric relaxation of CaCu3Ti4O12 (CCTO) ceramics were investigated. The dielectric properties were measured in the frequency from 10-1 Hz to 107 Hz under the temperature from 153 to 453 K. It was found that reduced CCTO grains as well as improved microstruc-ture were achieved by addition of 30mol%–50mol% CuAl2O4. When sintered at 1100℃ for 4 h, enhanced electric breakdown field of 13 kV/cm was obtained with 50mol% CuAl2O4 addition, while its dielectric loss at low fre-quency was greatly suppressed. Three energy levels of dielectric relaxation processes were found. It is suggested that energy level 1 eV of ~0.10 eV, corresponding to high frequency relaxation and barely varied with CuAl2O4 ad-dition, is attributed to the intrinsic electronic relaxation. Energy level 2 decreased from 0.50 eV to 0.22 eV with in-creased additional CuAl2O4, possibly resulted from multi impurities and boundaries. The energy level of conduction process rose from 0.66 eV to 0.86 eV with increased CuAl2O4 addition, which can be attributed to the block effect of more grain boundaries. In addition, the excessive content CuAl2O4 resulted in collapse of grain boundary barrier, leading to the vanish of non-ohmic properties and high dielectric constant.关键词
CaCu3Ti4O12/介电性能/压敏特性Key words
CaCu3Ti4O12/dielectric properties/varistor properties分类
信息技术与安全科学引用本文复制引用
李建英,侯林林,贾然,高璐,武康宁,李盛涛..尖晶石型CuAl2O4掺杂对CaCu3Ti4O12陶瓷介电性能的影响[J].无机材料学报,2015,(10):1056-1062,7.基金项目
国家自然科学基金(51177121,51221005) （51177121,51221005）
陕西省自然科学基础研究计划(2015JM5234) National Natural Science Foundation of China(51177121,51221005) （2015JM5234）
Natural Science Foundation Research Project of Shaanxi Province(2015JM5234) （2015JM5234）
