高分辨X射线衍射表征氮化镓外延层缺陷密度OA北大核心CSCDCSTPCD
High Resolution X-ray Diffraction Analysis of Defect Density of Gallium Nitride Epitaxial Layer
利用高分辨 X 射线衍射方法,分析了在4H-SiC(0001)面上采用金属有机物化学气相沉积(MOCVD)生长的GaN 薄膜的位错。采用对称面衍射和斜对称面衍射等方法研究了晶面倾转角、面内扭转角、晶粒尺寸和晶面弯曲半径等参数,通过排除仪器、晶粒尺寸及晶面弯曲对摇摆曲线半高宽的影响,从而获得 GaN 薄膜的螺位错密度和刃位错密度分别为4.62×107cm-2和5.20×109 cm-2,总位错密度为5.25×109 cm-2。
The measurement of dislocation densities in heteroepitaxial semiconductor GaN film is important for the developement of blue light-emitting diodes, laser diode and high temperature, high-frequency electronic devices. As there is no matching substrate material, GaN thin films prepared by epitaxial growth often contain a large number of defects, most of which are edge dislocations. High resolution X-ray diffraction method and the mosaic model were used to meas…查看全部>>
崔潆心;徐明升;徐现刚;胡小波
山东大学 晶体材料国家重点实验室，济南250100山东大学 晶体材料国家重点实验室，济南250100山东大学 晶体材料国家重点实验室，济南250100山东大学 晶体材料国家重点实验室，济南250100
化学化工
氮化镓薄膜高分辨X射线衍射位错密度
GaN filmhigh resolution X-ray diffractiondislocation density
《无机材料学报》 2015 (10)
具有重大应用前景的功能晶体材料
1094-1098,5
国家高技术研究发展计划863项目(2014AA032601)国家自然科学基金(51323002,61327808,51321091) National “863” High Technology Research(2014AA032601) National Natural Science Foundation of China (51323002,61327808,51321091)
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