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首页|期刊导航|无机材料学报|脉冲激光沉积中高能量密度激光密度对Cu2Se热电薄膜成分与性能的影响

脉冲激光沉积中高能量密度激光密度对Cu2Se热电薄膜成分与性能的影响

吕艳红 陈吉堃 DÖBELI Max 李宇龙 史迅 陈立东

无机材料学报Issue(10):1115-1120,6.
无机材料学报Issue(10):1115-1120,6.DOI:10.15541/jim20150197

脉冲激光沉积中高能量密度激光密度对Cu2Se热电薄膜成分与性能的影响

Congruent Growth of Cu2Se Thermoelectric Thin Films Enabled by Using High Ablation Fluence During Pulsed Laser Deposition

吕艳红 1陈吉堃 1DÖBELI Max 2李宇龙 3史迅 1陈立东1

作者信息

  • 1. 中国科学院上海硅酸盐研究所,中国科学院能量转换材料重点实验室,上海200050
  • 2. 北京科技大学材料科学与工程学院,北京100083
  • 3. 瑞士苏黎世联邦理工大学粒子物理中心,苏黎世8093
  • 折叠

摘要

Abstract

The importance of the laser ablation fluence in congruent growth of Cu2Se thermoelectric thin films during pulsed laser deposition was shown in this work. By using a larger laser ablation fluence, a more consistent composition between as-grown thin films and the target material has been realized in the pulsed laser deposition of Cu2Se films. This is associated with the enhanced plasma shielding effect, which weakens direct laser-solid interaction when in-creasing laser fluence. Reducing the ablation fluence can obviously increase the amount of the copper deficiencies, due to more effective laser ablation of Se (higher vapor pressure) than that of Cu when the laser direct lasser-solid interac-tion becomes more efficient. Apart from tuning the ablation fluence, thermoelectric performances of as-grown Cu2Se thin films are further optimized as a function of the used argon background gas pressures. The maximum thermoelec-tric performance of the Cu2Se thin film can be obtained when using the highest ablation fluence (~10 J/cm2) and a low argon background pressure(~10-1 Pa).

关键词

Cu2Se薄膜/脉冲激光沉积/热电/激光能量

Key words

Cu2Se film/pulsed laser deposition/thermoelectric/ablation fluence

分类

化学化工

引用本文复制引用

吕艳红,陈吉堃,DÖBELI Max,李宇龙,史迅,陈立东..脉冲激光沉积中高能量密度激光密度对Cu2Se热电薄膜成分与性能的影响[J].无机材料学报,2015,(10):1115-1120,6.

基金项目

National Basic Research Program of China(2013CB632501) (2013CB632501)

National Natural Science Foundation of China(51472262) (51472262)

无机材料学报

OA北大核心CSCDCSTPCD

1000-324X

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