物理学报Issue(3)：223-229,7.DOI:10.7498/aps.62.036102
微晶硅锗太阳电池本征层纵向结构的优化
Optimization of the longitudinal structure of intrinsic layer in microcrystalline silicon germanium solar cell∗
摘要
Abstract
Using radio-frequency plasma enhanced chemical vapor deposition, based on the influences of discharge power on structural and photoelectric properties of µc-SiGe:H thin films, RF power profiling technique is developed during the deposition of µc-SiGe:H intrinsic layer. The optimized µc-SiGe:H intrinsic layer not only maintains homogeneity of the crystalline volume fraction along the depth profile, but also forms a band gap profiling configuration from wide to narrow in the direction of growth. By this method, the fill factor and the short-circuit current density of µc-SiGe:H solar cell are significantly improved, and an efficiency of 9.54%for the a-Si:H/µc-SiGe:H tandem solar cell is achieved.关键词
微晶硅锗/辉光功率/带隙调节/太阳电池Key words
microcrystalline silicon germanium/discharge power/band gap modulation/solar cell引用本文复制引用
曹宇,张建军,李天微,黄振华,马峻,倪牮,耿新华,赵颖..微晶硅锗太阳电池本征层纵向结构的优化[J].物理学报,2013,(3):223-229,7.基金项目
国家自然科学基金(批准号:61076042,60607006)、国家重大科学仪器专项(批准号:2011YQ16000205)和国家高技术研究发展计划(批准号:2011AA03A106)资助的课题 （批准号:61076042,60607006）
