物理学报Issue(3)：270-276,7.DOI:10.7498/aps.62.036402
Ga30Sb70/Sb80Te20纳米复合多层薄膜的相变特性研究
Phase-change behaviors in Ga30Sb70/Sb80Te20 nanocomposite multilayer films∗
摘要
Abstract
Novel Ga30Sb70/Sb80Te20 nanocomposite multilayer films are prepared by alternate sputter deposition of two independent targets of Ga30Sb70 and Sb80Te20 in a magnetron sputtering system. The influence of layer thickness of Ga30Sb70 on the phase-change behavior of Ga30Sb70/Sb80Te20 multilayer film is investigated. The results show that the crystallization temperature can be controlled by adjusting the layer thickness of Ga30Sb70. The crystallization temperature increases with increasing the layer thickness of Ga30Sb70. The optical band gap is also found to increase with increasing in the layer thickness of Ga30Sb70. Transient crystallization dynamics of Ga30Sb70/Sb80Te20 multilayer film induced by single picosecond laser pulse pumping, is studied. The reversible phase transition between amorphous and crystalline state can be achieved by using picosecond laser pulses with different fluences.关键词
纳米复合/多层薄膜/相变/光学特性Key words
nanocomposite/multilayer films/phase-change behavior/optical properties引用本文复制引用
汪昌州,朱伟玲,翟继卫,赖天树..Ga30Sb70/Sb80Te20纳米复合多层薄膜的相变特性研究[J].物理学报,2013,(3):270-276,7.基金项目
国家自然科学基金(批准号:60866001)、教育部博士点基金(批准号:20105201110003)、贵州省优秀科技教育人才省长专项基金(批准号:黔省专合字(2009)114号)、贵州省科学技术基金(批准号:黔科篔字[2011]2095号)、贵州省留学人员科技项目(批准号:Z103233)和贵州财经大学2010博士基金资助的课题 （批准号:60866001）
