物理学报Issue(3)：329-334,6.DOI:10.7498/aps.62.037202
铁磁绝缘体间的极薄Bi2Se3薄膜的相变研究
Phase transition of ultrathin Bi2Se3 film sandwiched between ferromagnetic insulators∗
摘要
Abstract
For an ultra-thin Bi2Se3 film sandwiched between two ferromagnetic insulators (FIs), we investigate how its topological properties change with the angle between the magnetizations of the two FIs. The Chern numbers are calculated from the low-energy effective Hamiltonian for electrons in the surface states, and the bulk energy band and the edge states are simulated from the tight-binding model of a long ribbon with armchair edges on a two-dimensional honeycomb lattice, from which the topological phase of the system can be determined. It is found that with the magnetizations of the FIs varying from parallel to antiparallel, there appears a topological phase transition from the anomalous quantum Hall phase to the trivial insulating one at a critical angle.关键词
拓扑绝缘体/交换场/反常量子霍尔效应/边缘态Key words
topological insulator/exchange field/anomalous quantum Hall effect/edge state引用本文复制引用
王怀强,杨运友,鞠艳,盛利,邢定钰..铁磁绝缘体间的极薄Bi2Se3薄膜的相变研究[J].物理学报,2013,(3):329-334,6.基金项目
国家自然科学基金(批准号:11274197,10504016)和科技部973项目(批准号:2010CB922904)资助的课题 （批准号:11274197,10504016）
