物理学报Issue(3)：382-386,5.DOI:10.7498/aps.62.037703
N离子注入富氧ZnO薄膜的p型导电及拉曼特性研究
Study on the p-type conductivities and Raman scattering properties of N+ion-implanted O-rich ZnO thin films∗
摘要
Abstract
The p-type N doped ZnO thin films are fabricated using radio-frequency magnetron sputtering technique in O-rich growth con-dition together with the direct N+ion-implantation and annealing. The conductivities and Raman scattering properties of the samples are studied by Hall measurements and Raman spectra respectively. Hall measurements indicate that the optimal p-type ZnO film can be obtained when the sample is annealed at 600◦C for 120 min in N2 ambience, and its hole concentration is about 2.527×1017 cm−3. N+-implantation induces three additional vibrational modes in ZnO, which are located at 274.2, 506.7 and 640.4 cm−1 respectively. In the process of the annealing, by comparing the electrical properties and Raman speetra of the samples, we find that the competition between intrinsic donor defects and the activation of N acceptors plays a crucial role in the p-type formation of ZnO:N films during annealing.关键词
富氧ZnO/离子注入/p型导电/拉曼光谱Key words
O-rich ZnO/ion-implantation/p-type conductivity/Raman spectrum引用本文复制引用
杨天勇,崔玉亭,孔春阳,阮海波,秦国平,李万俊,梁薇薇,孟祥丹,赵永红,方亮..N离子注入富氧ZnO薄膜的p型导电及拉曼特性研究[J].物理学报,2013,(3):382-386,5.基金项目
国家自然科学重点基金(批准号:50932005,90922003,51172236)和国家自然科学青年基金(批准号:51102239)资助的课题 （批准号:50932005,90922003,51172236）
