n型有序多孔硅基氧化钨室温气敏性能研究OA北大核心CSCDCSTPCD
Gas-sensing properties at room temperature for the sensors based on tungsten oxide thin films sputtered on n-type ordered porous silicon∗
利用电化学腐蚀方法制备了n型有序多孔硅,并以此为基底用直流磁控溅射法在其表面溅射不同厚度的氧化钨薄膜。利用X射线和扫描电子显微镜表征了材料的成分和结构,结果表明,多孔硅的孔呈柱形有序分布,溅射10 min的WO3薄膜是多晶结构,比较松散地覆盖在整个多孔硅的表面。分别测试了多孔硅和多孔硅基氧化钨在室温条件下对二氧化氮的气敏性能,结果表明,相对于多孔硅,多孔硅基氧化钨薄膜对二氧化氮的气敏性能显著提高。对多孔硅基氧化钨复合结构的气敏机理分析认为,多…查看全部>>
n-type porous silicons are prepared by the electrochemical corrosion method, on which tungsten oxide thin films with different thickness values are sputtered using DC reactive magnetron sputtering. The structures of ordered porous silicons and tungsten oxide thin films are characterized using field emission scanning electron microscope, which show that the pores are pillared and ordered and the thin films cover the porous layer loosely with many pores open…查看全部>>
胡明;刘青林;贾丁立;李明达
天津大学电子信息工程学院,天津 300072天津大学电子信息工程学院,天津 300072天津大学电子信息工程学院,天津 300072天津大学电子信息工程学院,天津 300072
有序多孔硅氧化钨薄膜二氧化氮室温气敏性能
ordered porous silicontungsten oxide thin filmsnitrogen dioxidegas-sensing properties at room temperature
《物理学报》 2013 (5)
361-368,8
内蒙古自然科学基金(批准号:2011MS0113)和内蒙古人才基金(2010)资助的课题.Project supported by the Natural Science Foundation of Inner Mongolia, China (Grant No.2011MS0113), and the Talent Foundation of Inner Mongolia (2010)
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