物理学报Issue(5)：369-374,6.DOI:10.7498/aps.62.057103
应变Si NMOS积累区电容特性研究
Research on the capacitance-voltage characteristic of strained-silicon NMOS accumulation capacitor∗
摘要
Abstract
Accumulation MOS capacitor is more linear than inversion MOS capacitor and is almost independent of the operation frequency. In this paper, we present first the formation mechanism of the“plateau”, observed in the C-V characteristic of the strained-Si NMOS capacitor, and then a physical model for strained-Si NMOS capacitor in accumulation region. The results from the model show to be in excellent agreement with the experimental data. The proposed model can provide valuable reference for the strained-Si device design, and is has been implemented in the software for extracting the parameter of strained-Si MOSFET.关键词
应变Si NMOS/积累区电容/台阶效应/电荷分布Key words
strained-Si NMOS/accumulation capacitor/plateau/charge distribution引用本文复制引用
王斌,张鹤鸣,胡辉勇,张玉明,舒斌,周春宇,李妤晨,吕懿..应变Si NMOS积累区电容特性研究[J].物理学报,2013,(5):369-374,6.基金项目
国家自然科学基金(批准号:61204105),上海自然科学基金(批准号:B10ZR1412400)和上海市科技创新行动计划地方院校能力建设项目(批准号:10110502200)资助的课题.Project supported by the National Natural Science Foundation of China (Grant No.61204105), the Natural Science Foundation of Shanghai (Grant No. B10ZR1412400), and the Innovation capacity building project of Shanghai(Grant No.10110502200) （批准号:61204105）
