物理学报Issue(5)：522-526,5.DOI:10.7498/aps.62.058502
不同粒子辐射条件下CC4013器件辐射损伤研究
Radiation damage induced by various particles on CC4013 devices∗
摘要
Abstract
During serving in orbit, spacecraft will be affected by the radiation environment of the space high-energy charged particles, leading to the performance degradation or even malfunctions of electronic components. The complementary metal oxide semiconductor (CMOS) devices are sensitive to ionization damage. Therefore, it is valuable to research the mechanism of radiation effects on CMOS devices, and is significant to engineering and theory. The CC4013 CMOS integrated circuits are irradiated with 60 MeV Br ions, 5 MeV protons and 1 MeV electrons. Based on the data calculated by Geant4 code, the ionizing absorbed dose induced by 60 MeV Br ions is greatest, and the ionizing absorbed dose induced by 1 MeV electrons is lowest. The degradation of CC4013 device during the irradiation test is in-situ measured with Keithley 4200-SCS semiconductor characteristic system. From the experimental results, the threshold voltage degradation in CC4013 under an exposure of 1 MeV electrons is greatest at the same dose, a little lower under 5 MeV protons, and lowest under 60 MeV Br ions.关键词
CMOS器件/高能带电粒子/电离辐射/辐射损伤Key words
CMOS device/high-energy charged particle/ionizing radiation/radiation damage引用本文复制引用
李兴冀,刘超铭,孙中亮,兰慕杰,肖立伊,何世禹..不同粒子辐射条件下CC4013器件辐射损伤研究[J].物理学报,2013,(5):522-526,5.基金项目
国家自然科学基金(批准号:11265008)资助的课题.Project supported by the National Natural Science Foundation of China (Grant No.11265008) （批准号:11265008）
