物理学报Issue(7)：305-310,6.DOI:10.7498/aps.62.076103
直拉单晶硅中洁净区形成后铜沉淀行为的研究
Investigation of copper precipitation in denuded zone in Czochralski silicon∗
摘要
Abstract
The precipitation behavior of copper in denuded zone (DZ) of Czochralski silicon has been systematically investigated by means of etching and optical microscopy (OM). Firstly, the samples were treated in a conventional furnace by high-low-high annealing for the formation of denuded zone. Subsequently, copper contamination was introduced at different temperatures. Finally, samples were treated with rapid thermal annealing (RTA) and conventional furnace annealing separately. It was found that, copper precipitates could be observed in DZ through OM only in the samples which experienced RTA followed by contamination in 900 ◦C and 1100 ◦C. This indicates that the out-diffusion of vacancy which is produced in the process of RTA is the main cause for the copper precipitation in DZ.关键词
直拉单晶硅/铜沉淀/洁净区Key words
Czochralski silicon/copper precipitation/denuded zone引用本文复制引用
张光超,徐进..直拉单晶硅中洁净区形成后铜沉淀行为的研究[J].物理学报,2013,(7):305-310,6.基金项目
国家自然科学基金(批准号:50902116)、硅材料国家重点实验室开放基金(批准号:SKL2012-17)和福建省高等学校新世纪优秀人才支持计划资助的课题 （批准号:50902116）
