物理学报Issue(7)：323-328,6.DOI:10.7498/aps.62.076106
60Coγ射线对高铝组分Al0.5Ga0.5N基p-i-n日盲型光探测器理想因子的影响
60Coγ-radiation effects on the ideality factor of AlxGa1-xN p-i-n solar-blind detector with high content of aluminum
摘要
Abstract
High Al content AlxGa1−xN solar-blind photodetector and Si p-i-n visible light detector were irradiated with 60Coγ-rays up to 0.1, 1, 10 Mrad(Si). With the increase of total radiation dose, the ideality factor of AlxGa1−xN p-i-n diode saw a significant rise and the ideality factor n is grater than 2 with a total dose up to 10 Mrad(Si);the ideality factor of Si p-i-n diode, however, changed only slightly even up to 10 Mrad(Si). The degradation of AlxGa1−xN p-i-n diode might be attributed to the deterioration of Ohmic contacts, however, to some extent, the slight increase of the Si p-i-n diode might be due to the degradation of the insensitive layer.关键词
高铝组分AlxGa1−xN/γ射线辐射效应/理想因子/欧姆接触Key words
high Al content AlxGa1−xN/γ-ray radiation effects/ideality factor/Ohmic contact引用本文复制引用
张孝富,吴正新,李豫东,郭旗,罗木昌,何承发,于新,申志辉,张兴尧,邓伟..60Coγ射线对高铝组分Al0.5Ga0.5N基p-i-n日盲型光探测器理想因子的影响[J].物理学报,2013,(7):323-328,6.基金项目
国家重点基础研究发展计划(批准号:2013CB632103)和国家自然科学基金(批准号:61036003,61176013和61177038)资助的课题 （批准号:2013CB632103）
