物理学报Issue(7)：335-338,4.DOI:10.7498/aps.62.076108
掺杂对多层Ge/Si（001）量子点光致发光的影响
Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate∗
摘要
Abstract
Four-bilayer Ge quantum dots (QDs) with Si spacers were epitaxially grown on Si(001) substrates by means of ultrahigh vacuum chemical vapor deposition. In two samples, Ge QDs were in situ doped with phosphorus or boron, separately. Surface morphology and room temperature photoluminescence (PL) of multilayer Ge/Si QDs wer studied. Compared with the undoped Ge QDs, phosphorus-doping did not change the morphology of Ge QDs, enhanced PL wer observed from the phosphorus-doped Ge QDs. But reduction of Ge QDs density and PL intensity wer observed from the boron-doped Ge QDs. The intensity enhancement of PL could be attributed to the sufficient supply of electrons in Ge QDs for radiative recombination.关键词
Ge/Si量子点/磷掺杂/光致发光Key words
Ge/Si quantum dots/phosphorus-doped/photoluminescence引用本文复制引用
刘智,李亚明,薛春来,成步文†,王启明..掺杂对多层Ge/Si（001）量子点光致发光的影响[J].物理学报,2013,(7):335-338,4.基金项目
国家自然科学基金(批准号:51074080)和江苏省自然科学基金(批准号:BK2008240)资助的课题 （批准号:51074080）
