物理学报Issue(7)：377-384,8.DOI:10.7498/aps.62.077103
应变Si NMOSFET阈值电压集约物理模型
Physical compact modeling for threshold voltage of strained Si NMOSFET∗
摘要
Abstract
The development of strained-Si physical compact threshold voltage model is based on Poisson’s equation, using the gradual channel approximation (GCA) and coherent quasi-two-dimensional (2D) analysis, as well as taking into account the effects of short channel effect (SCE), narrow channel effect (NCE), non-uniform doping effect, and drain-induced barrier lowering (DIBL) effect. Moreover, the threshold voltage parameters are extracted from the experimental results by software. Finally, the validity of our model is derived from the comparison of our simulation results. The proposed model may be useful for the design and simulation of very large scale integrated circuits (VLSI) made of strained-Si.关键词
应变Si NMOSFET/阈值电压/集约物理模型Key words
strained Si NMOSFET/threshold voltage/physical compact modeling引用本文复制引用
周春宇,张鹤鸣,胡辉勇,庄奕琪,舒斌,王斌,王冠宇..应变Si NMOSFET阈值电压集约物理模型[J].物理学报,2013,(7):377-384,8.基金项目
国家自然科学基金(批准号:61072015)、浙江省自然科学基金(批准号：Z4110503, LQ12F05001)和浙江省教育厅科研项目(批准号:Y201223083)资助的课题 （批准号:61072015）
