物理学报Issue(9)：451-455,5.DOI:10.7498/aps.62.097902
合成温度对Ce掺杂SiC纳米线的制备及场发射性能的影响研究*
Effect of synthesis temperature on preparation and field emission property of Ce-doped SiC nanowires∗
摘要
Abstract
In this paper, Ce doped-SiC nanowires were prepared by chemical vapor reaction technique at the different synthesis tempera-tures, and the field emission (FE) properties of the nanowires were measured. The products were characterized by scanning electron microscope (SEM), transmission electron microscope (TEM), selected area electron diffraction (SAED) and X-ray diffraction (XRD). The results suggested that the products wereβ-SiC, the nanowires become bending and the content of Ce reduces with increasing temperature;the values of the turn-on and threshold field increase at first and then decrease. When the synthesis temperature is 1250◦C, the content of Ce is 0.27 at%, the turn-on and threshold fields of the product are 2.5 V/µm and 5.2 V/µm.关键词
合成温度/SiC纳米线/场发射性能Key words
synthesis temperature/SiC nanowires/field emission (FE) properties引用本文复制引用
李镇江,李伟东..合成温度对Ce掺杂SiC纳米线的制备及场发射性能的影响研究*[J].物理学报,2013,(9):451-455,5.基金项目
中国科学院知识创新工程重要方向项目(批准号:KGCX2-YW-906, KGCX2-EW-105)和中国科学院“百人计划”项目资助的课题.@@@@Project supported by the Key Program in Innovation Engineering Project of the Chinese Academy of Sciences (Grant Nos. KGCX2-YW-906, KGCX2-EW-105), and the ’One Hundred’ Talents Project of the Chinese Academy of Sciences, China （批准号:KGCX2-YW-906, KGCX2-EW-105）
