物理学报Issue(9)：477-482,6.DOI:10.7498/aps.62.098503
偏置条件对NPN及PNP双极晶体管电离辐射损伤的影响研究*
The influence of bias conditions on ionizing radiation damage of NPN and PNP transistors∗
摘要
Abstract
Bipolar junction transistors (BJTs), as important electronic components in analog or mixed-signal integrated circuits (ICs) and BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) circuits, are employed in the space environment. Therefore, the research on characteristics and mechanisms of ionization damage in the BJTs is very important. Lower energy electrons are used as irradiation source to study the ionization damage in NPN and PNP transistors. Various bias conditions are imposed on the emitter-base junction to reveal the different bias conditions that contribute to the radiation effect on NPN and PNP transistors during irradiation processing. The semiconductor parameter analyzer, Keithley 4200-SCS, is used to measure the change of electrical parameters of transistors with increasing electron irradiation fluence in situ. Based on the measurement results, we find the degradation of transistors is severe under reverse emitter-base bias, and is lowest under forward emitter-base bias, while it is medium under zero emitter-base bias at a given irradiation fluence.关键词
双极晶体管/低能电子/电离辐射Key words
bipolar junction transistor/low-energy electron/ionizing radiation引用本文复制引用
李兴冀,兰慕杰,刘超铭,杨剑群,孙中亮,肖立伊,何世禹..偏置条件对NPN及PNP双极晶体管电离辐射损伤的影响研究*[J].物理学报,2013,(9):477-482,6.基金项目
国家高技术研究发展计划(批准号:2012AA011603)资助的课题.@@@@Project supported by the National High Technology Research and Development Program of China (Grant No.2012AA011603) （批准号:2012AA011603）
