物理学报Issue(11)：1-7,7.DOI:10.7498/aps.62.110101
低温退火磷吸杂工艺对低少子寿命铸造多晶硅电性能的影响
Effects of low-temperature annealing phosphorous gettering process on the electrical properties of multi-crystalline silicon with a low minority carrier lifetime
摘要
Abstract
A new low-temperature annealing phosphorous gettering process (LTAPGP) was developed to improve the electrical properties of multi-crystalline silicon which has a low minority carrier lifetime. LTAPGP combined a multi-plateau temperature phosphorous gettering process and a low-temperature annealing process. LTAPGP can remove the iron impurities and crystallographic defects of multi-crystalline silicon, and improve the electrical properties of silicon solar cells that were produced from low minority carrier lifetime silicon wafers. Compared with multi-plateau and two-plateau temperature phosphorous gettering process, LTAPGP was more effective in gettering iron impurities and repairing crystallographic defects. The multi-crystalline silicon wafers with a low minority carrier lifetime went through an LTAPGP process were utilized to produce solar cells. The IV-measurement data prove that the efficiency of the new solar cells is 0.2% higher than that of specimens subject to the multi-plateau and two-plateau temperature processes. The results indicat that LTAPGP can make the low minority carrier lifetime silicon wafers to be used in solar cell industry, improve the utilization ratio and reduce the production cost of cast polysilicon.关键词
低温退火/磷吸杂/低少子寿命多晶硅/太阳电池Key words
low-temperature annealing/phosphorous gettering/low minority carrier lifetime silicon/solar cell引用本文复制引用
姜丽丽,路忠林,张凤鸣,鲁雄..低温退火磷吸杂工艺对低少子寿命铸造多晶硅电性能的影响[J].物理学报,2013,(11):1-7,7.基金项目
国家自然科学基金(批准号:11202106)、浙江省自然科学基金(批准号:Y6110502, Y13A010029)和安徽高校省级自然科学研究项目(批准号:KJ2012A001, KJ2012Z245)资助的课题.物理学报201311*Project supported by the National Natural Science Foundation of China (Grant No.11202106), the Natural Science Foundation of Zhejiang Province, China (Grant Nos. Y6110502, Y13A010029), and the Natural Science Foundation from the Education Bureau of Anhui Province (Grant Nos. KJ2012A001, KJ2012Z245) （批准号:11202106）
