物理学报Issue(11)：370-376,7.DOI:10.7498/aps.62.116101
总剂量辐射环境中的静态随机存储器功能失效模式研究
Research on SRAM functional failure mode induced by total ionizing dose irradiation
摘要
Abstract
In the present paper, function test of different test pattern was used to investigate function failure of static random access memory (SRAM) induced by the total dose effect. By comparing the function test results of different test pattern and single error bit, it is shown that the failure mode of the device is data retention fault, and different storage cell had diverse data retention time, the fault module of device is the storage cell. We discussed the reason for these phenomena in detail using simple circuit model of storage cell, and also analyzed the influence of these phenomena on test method to evaluate the total dose radiation damage of SRAM.关键词
静态随机存储器/功能失效/测试图形/数据保存错误Key words
SRAM/function failure/test pattern/data retention fault引用本文复制引用
郑齐文,余学峰†,崔江维,郭旗,任迪远,丛忠超..总剂量辐射环境中的静态随机存储器功能失效模式研究[J].物理学报,2013,(11):370-376,7.基金项目
国家自然科学基金(批准号:11272006,10902102)和中物院发展基金(批准号:2010A0201008,2012B0201017)资助的课题. （批准号:11272006,10902102）
@@@@*Projected supported by the National Natural Science Foundation of China (Grant Nos.10902102,11272006), and the Science and Technology Founda-tion of China Academy of Engineering Physics, China (Grant Nos.2010A0201008,2012B0201017) （Grant Nos.10902102,11272006）
