物理学报Issue(11)：438-443,6.DOI:10.7498/aps.62.117302
等离子增强原子层沉积低温生长AlN薄膜*
Low-temperature growth of AlN thin films by plasma-enhanced atomic layer deposition*
摘要
Abstract
The crystalline AlN thin film was fabricated on Si(100) substrates by plasma-enhanced atomic layer deposition. Its growth rate was illustrated by spectroscopic ellipsometer. And the surface morphology, crystal structure and composition were characterized by atomic force microscopy, X-ray diffraction, high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Results show that the lowest temperature for deposition of the crystalline AlN thin film is 200 ◦C, and the film coverage on the substrate surface is continuous and homogeneous. The film prepared with a homogeneous concentration distribution is polycrystalline with a hexagonal wurtzite structure. High resolution Al2p and N1s spectra confirm the presence of AlN with peaks located at 74.1 eV and 397.0 eV, respectively.关键词
氮化铝/等离子增强原子层沉积/低温生长/晶态薄膜Key words
AlN/plasma-enhanced atomic layer deposition/low-temperature growth/crystalline film引用本文复制引用
冯嘉恒,唐立丹†,刘邦武,夏洋,王冰..等离子增强原子层沉积低温生长AlN薄膜*[J].物理学报,2013,(11):438-443,6.基金项目
国家自然科学基金(批准号:60877069)和广东省战略新兴产业专项资金(批准号:2011A081301004,2012A080304006)资助的课题. （批准号:60877069）
@@@@*Project supported by the National Natural Science Foundation of China (Grant No.60877069), the Science and Technology Key Program of Guangdong Province, China (Grant Nos.2011A081301004,2012A080304006) （Grant No.60877069）
