物理学报Issue(11)：494-497,4.DOI:10.7498/aps.62.117802
InN的光致发光特性研究*
Study on the photoluminescence properties of InN films*
摘要
Abstract
The photoluminescence (PL) properties of InN films grown by metal organic chemical vapor deposition (MOCVD) have been investigated. InN has a high level of background carrier concentration, which makes the Fermi level lie above the conduction band. By nonlinear fitting of the PL results, along with the energy band relations, we calculated the band gap of InN film to be 0.67 eV and the carrier concentration n=5.4×1018 cm−3. Thus we found a connection between PL results and the carrier concentration of InN films. In addition, we also studied the dependence of peak position and intensity of PL on temperature: the intensity of photoluminescence decreases as the temperature increases, and the peak position shows a red shift instead of an S-shape variation. Such a difference may be explained by a huge full width at half maximum of PL spectra. Also the concentration of carriers and the magnitude of the built-in electric field in the material may have influence on such a result.关键词
氮化铟/金属有机化学气相淀积/光致发光/载流子浓度Key words
InN/MOCVD/photoluminescence/carrier concentration引用本文复制引用
王健,谢自力†,张荣,张韵,刘斌,陈鹏,韩平..InN的光致发光特性研究*[J].物理学报,2013,(11):494-497,4.基金项目
国家自然科学基金(批准号:50972129,50602039)和浙江省钱江人才计划(批准号:2010R10026)资助的课题. （批准号:50972129,50602039）
@@@@*Project supported by the National Natural Science Foundation of China (Grant Nos.50972129,50602039), and the Qianjiang Talent Project of Zhejiang Province of China (Grant No.2010R10026) （Grant Nos.50972129,50602039）
