物理学报Issue(11)：504-513,10.DOI:10.7498/aps.62.118101
退火温度对硼掺杂纳米金刚石薄膜微结构和p型导电性能的影响*
Effects of annealing temperature on the microstructure and p-type conduction of B-doped nanocrystalline diamond films*
摘要
Abstract
Annealing of different temperatures was performed on boron-doped nanocrystalline diamond (BDND) films synthesized by hot filament chemical vapor deposition (HFCVD). Effects of annealing temperature on the microstructural and electrical properties of BDND films were systematically investigated. The Hall-effect results show that smaller resistivity and Hall mobility values as well as higher carrier concentration exist in the 5000 ppm boron-doped nanocrystalline diamond film (NHB) as compared with those in 500 ppm boron-doped nanocrystalline diamond film (NLB). After 1000 ◦C annealing, the Hall mobility of NLB and NHB samples were 53.3 and 39.3 cm2·V−1·s−1, respectively, indicating that annealing increases the Hall mobility and decreases the resistivity of the films. HRTEM, UV, and visible Raman spectroscopic results show that the content of diamond phase in NLB samples is larger than that in NHB samples because higher B-doping concentration results in a greater lattice distortion. After 1000 ◦C annealing, the amount of nano-diamond phase of NLB and NHB samples both increase, indicating that a part of the amorphous carbon transforms into the diamond phase. This provides an opportunity for boron atoms located at the grain boundaries to diffuse into the nano-diamond grains, which increases the concentration of boron in the nano-diamond grains and improves the conductivity of nanocrystalline diamond grains. It is observed that 1000 ◦C annealing treatment is beneficial for lattice perfection of BDND films and reduction of internal stress caused by doping, so that the electrical properties of BDND films are improved. Visible Raman spectra show that the trans-polyacetylene (TPA) peak (1140 cm−1) disappears after 1000 ◦C annealing, which improves the electrical properties of BDND films. It is suggested that the larger the diamond phase content, the better the lattice perfection and the less the TPA amount in the annealed BDND samples that prefer to improve the electrical properties of BDND films.关键词
硼掺杂纳米金刚石薄膜/退火/微结构/电学性能Key words
boron-doped nanocrystalline diamond films/annealing/microstructural properties/electrical properties引用本文复制引用
顾珊珊,胡晓君†,黄凯..退火温度对硼掺杂纳米金刚石薄膜微结构和p型导电性能的影响*[J].物理学报,2013,(11):504-513,10.基金项目
上海工程技术大学研究生科研创新项目(批准号:2011yjs18)和上海高校一流学科建设计划(批准号:YLJX12-2)资助的课题. （批准号:2011yjs18）
@@@@*Project supported by the Shanghai University of Engineering Science for graduate students innovation project, China (Grant No.2011yjs18), and the Top Discipline Plan for Mechanical Engineering of Shanghai Municipal Education Commission, China (Grant No. YLJX12-2) （Grant No.2011yjs18）
