物理学报Issue(12)：1-7,7.DOI:10.7498/aps.62.127102
应变SiGe p型金属氧化物半导体场效应管栅电容特性研究*
Study on gate capacitance-voltage characteristics of strained-SiGe pMOSFET∗
摘要
Abstract
The gate capacitance-voltage (C-V) characteristic of strained SiGe pMOSFET is very different from that of bulk Si pMOSFET, and can be strongly affected by the channel doping. In this paper, we first study the formation mechanism of the“plateau”which can be observed in the gate C-V characteristics of strained SiGe pMOSFET, and then present a physics based analytical model to predict the gate C-V characteristic of strained SiGe pMOSFET. It is found that this plateau is channel doping dependent. The results from the model are compared with the experimental results and they are found to be in excellent agreement with each other, giving the evidence for its validity.关键词
应变SiGe pMOSFET/栅电容特性/台阶效应/沟道掺杂Key words
strained SiGe pMOSFET/gate C-V characteristics/plateau/channel doping引用本文复制引用
王斌,张鹤鸣,胡辉勇,张玉明,宋建军,周春宇,李妤晨..应变SiGe p型金属氧化物半导体场效应管栅电容特性研究*[J].物理学报,2013,(12):1-7,7.基金项目
模拟集成电路国家重点实验室基金(批准号:P140c090303110c0904)、高等学校博士学科点专项科研基金(批准号:JY0300122503)和中央高校基本科研业务费(批准号:K5051225014,K5051225004)资助的课题 （批准号:P140c090303110c0904）
