物理学报Issue(15)：1-6,6.DOI:10.7498/aps.62.156107
串口型铁电存储器总剂量辐射损伤效应和退火特性
Serial ferroelectric memory ionizing radiation effects and annealing characteristics
张兴尧 1郭旗 2陆妩 3张孝富 1郑齐文 2崔江维 1李豫东 2周东1
作者信息
- 1. 中国科学院新疆理化技术研究所，乌鲁木齐 830011
- 2. 新疆电子信息材料与器件重点实验室，乌鲁木齐 830011
- 3. 中国科学院大学，北京 100049
- 折叠
摘要
Abstract
Ferroelectric random memory was irradiated and annealed by 60Coγ-rays, total ionizing dose (TID) failure mechanism and anneal-ing characteristics of the device were analyzed. DC, AC and function parameters of the memory were tested in radiation and annealing by very large scale integrated cicuit (VLSI) test system, the radiation-sensitive parameters were obtained through analyzing the test data. Ionizing radiation produced a large number of oxide trapped charges, leading MOS transistor threshold to the negative drift in memory peripheral control circuit. Additional electric field was introduced in the ferroelectric film, and leakage current was produced since the Schottky emission or space-charge-limited current occurred. The number of shallower levels and metastable state oxide trapped charges are more than the deep level oxide trapped charge, so that the device functions and the radiation-sensitive parameters were restored in the annealing.关键词
铁电存储器/总剂量辐射/退火特性Key words
ferroelectric random memory/ionizing radiation effects/annealing characteristics引用本文复制引用
张兴尧,郭旗,陆妩,张孝富,郑齐文,崔江维,李豫东,周东..串口型铁电存储器总剂量辐射损伤效应和退火特性[J].物理学报,2013,(15):1-6,6.
