物理学报Issue(15)：1-7,7.DOI:10.7498/aps.62.158101
氧离子注入微晶金刚石薄膜的微结构与光电性能研究*
Microstructural and photoelectrical properties of oxygen-ion-implanted microcrystalline diamond films*
摘要
Abstract
The influences of oxygen ion dose and annealing temperature on the microstructural and photoelectrical properties of microcrys-talline diamond films with Si-V luminescence centers were systematically investigated. Results show that high temperature annealing prefers to increase the Si-V luminescence intensity in oxygen-ion-implanted microcrystalline diamond films. With oxygen ion dose increasing from 1014 to 1015 cm−2, the Si-V luminescence intensity of the films enhances. Hall effects measurement show that the resistivity of the films becomes lower after annealing. At different annealing temperatures, the oxygen-ion-implanted microcrystalline diamond films with stronger Si-V luminescence intensity exhibit larger resistivity, indicating that the Si-V luminescence centers are not favorable to the enhance ment of the conductivity of films. Results of Raman spectroscopy show that the increase of defects in films will enhance Si-V luminescence intensity and decrease the conductivity of the films.关键词
金刚石薄膜/氧离子注入/电学性能/Si-V 缺陷Key words
diamond films/oxygen ion implantation/electrical properties/Si-V defects引用本文复制引用
王峰浩,胡晓君..氧离子注入微晶金刚石薄膜的微结构与光电性能研究*[J].物理学报,2013,(15):1-7,7.基金项目
国家自然科学基金(批准号:50972129,50602039,51211120188)和浙江省钱江人才计划(批准号:2010R10026)资助的课题.* Project supported by the National Natural Science Foundation of China (Grant Nos.50972129,50602039,51211120188), and the Qianjiang Talent Project of Zhejiang Province of China (Grant No.2010R10026) （批准号:50972129,50602039,51211120188）
