物理学报Issue(15)：1-5,5.DOI:10.7498/aps.62.158802
空间用 GaInP/GaAs/In0.3Ga0.7 As（1 eV）倒装三结太阳电池研制*
Investigation of inverted metamorphic GaInP/GaAs/In0.3Ga0.7As (1 eV) triple junction solar cells for space applications*
摘要
Abstract
High efficiency inverted metamorphic (IMM) GaInP/GaAs/In0.3Ga0.7As(1.0 eV) triple-junction solar cells have been fabricated by growing In0.3Ga0.7As(1.0 eV) sub-cell using step-graded buffer layer, which is 2% lattice mismatch to the GaAs middle cell. The high crystalline quality and low threading dislocation density are confirmed by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). The quantum efficiency and I-V characteristic are measured for the IMM GaInP/GaAs/In0.3Ga0.7As solar cells, as well as for the conventional triple-junction solar cell based on Ge substrate (GaInP/GaAs/Ge). The efficiency of the designed cell with an area of 10.922 cm2 is 32.64% (AM0, 25 ◦C), which is 3% higher than the conventional GaInP/GaAs/Ge triple junction solar cell.关键词
太阳电池/三结/倒装结构Key words
solar cell/triple junction/inverted metamorphic structure引用本文复制引用
张永,单智发,蔡建九,吴洪清,李俊承,陈凯轩,林志伟,王向武..空间用 GaInP/GaAs/In0.3Ga0.7 As（1 eV）倒装三结太阳电池研制*[J].物理学报,2013,(15):1-5,5.基金项目
国家高技术研究发展计划(批准号:2011AA050512)资助的课题.* Project supported by the National High Technology Research and Development Program of China (Grant No.2011AA050512) （批准号:2011AA050512）
