太赫兹科学与电子信息学报Issue(1)：43-49,7.
InP基三端太赫兹固态电子器件和电路发展
Development of InP-based three-terminal terahertz solid state electronic devices and circuits
摘要
Abstract
The fast development of microelectronics makes the cutoff frequency of semiconductor devices exceed terahertz,which significantly improves the frequency characteristics of terahertz circuits. The solid-state electronic circuits can operate at terahertz frequency. The development of InP-based bipolar devices and field effect transistors are reviewed, and their applications in terahertz circuits and systems are introduced as well.关键词
太赫兹/InP基晶体管/固态电子器件/太赫兹单片集成电路Key words
terahertz/InP-based transistors/solid state electronic device/Terahertz Monolithic Integrated Circuits(TMIC)分类
信息技术与安全科学引用本文复制引用
金智,苏永波,张毕禅,丁芃,汪丽丹,周静涛,杨成樾,刘新宇..InP基三端太赫兹固态电子器件和电路发展[J].太赫兹科学与电子信息学报,2013,(1):43-49,7.基金项目
国家重点基础研究发展计划(973计划)资助项目(No.2010CB327502) （973计划）
