太赫兹科学与电子信息学报Issue(3):328-331,4.DOI:10.11805/TKYDA201303.0328
基于氧化钒热敏特性的太赫兹探测器
Terahertz detectors based on the thermal sensing characteristics of vanadium oxides
罗振飞 1周逊 2李赜宇 1王度 2张庆伟 1杨存榜2
作者信息
- 1. 中国工程物理研究院激光聚变研究中心,四川 成都 610041
- 2. 中国工程物理研究院太赫兹研究中心,四川 绵阳 621999
- 折叠
摘要
Abstract
Although uncooled infrared microbolometers utilizing vanadium oxide(VOX) thin films as the thermal sensing layers have achieved great success in infrared detection applications, there are many shortcomings when they are directly employed to detect the Terahertz(THz) wave whose wavelength locates in the far infrared region. In this paper, the basic technical requirements of the THz absorber, VOX thin film, and signal read-out circuit for the design of THz detector based on microbolometer are discussed. Some experimental results of VOX thin films with good thermal sensing performance are given.关键词
太赫兹探测器/氧化钒/微测辐射热计Key words
THz detector/vanadium oxide/microbolometer分类
信息技术与安全科学引用本文复制引用
罗振飞,周逊,李赜宇,王度,张庆伟,杨存榜..基于氧化钒热敏特性的太赫兹探测器[J].太赫兹科学与电子信息学报,2013,(3):328-331,4.