液晶与显示Issue(6)：904-908,5.DOI:10.3788/YJYXS20153006.0904
干法刻蚀工艺对 TFT-LCD Flicker 改善的研究
Improvement of flicker TFT-LCD by dry etching process
李鑫 1卞丽丽 1陈曦 1吴成龙 1贠向南1
作者信息
- 1. 福州京东方光电科技有限公司，福建 福州 350330
- 折叠
摘要
Abstract
To improve the flicker in TFT-LCD,by studying the influence of Dry Etch(Nplus Etch)on TFT characteristics,the etching conditions (power and gas)were optimized,and the Photo-Iof was reduced,then the flicker was improved.Experimental results show that when the main process condi-tions of Nplus Etch were:Source/Bias=4 k/5 k,Press=90 mT,SF6/O2 =1.1 k/3 kmL/min and the conditions of AT Step were:Source/Bias=2 k/2 k,Press=100 mT,SF6/O2 =3 k/3 kmL/min,the Photo-Iof fell from 58.15 to 20.52 and the flicker fell from 15%-30% to 10% or less.The optimization of Dry Etching process has obvious improvement to TFT characteristics and flicker.关键词
干法刻蚀/TFT 特性/闪烁改善Key words
dry etch/TFT characteristics/flicker improvement分类
信息技术与安全科学引用本文复制引用
李鑫,卞丽丽,陈曦,吴成龙,贠向南..干法刻蚀工艺对 TFT-LCD Flicker 改善的研究[J].液晶与显示,2015,(6):904-908,5.
