液晶与显示Issue(6)：943-948,6.DOI:10.3788/YJYXS20153006.0943
Bphen 掺杂 Cs2 CO3作为电子传输层对 OLED器件性能的影响
Impact of Bphen doping Cs2 CO3 as electron transport layer on the performance of OLEDs
摘要
Abstract
In order to improve the balance of carrier injection,a high electron mobility material Bphen and Bphen ∶ Cs2 CO3 are introduced in OLED devices respectively based on the structure of ITO/MoO3/NPB/Alq3/Cs2 CO3/Al.The experiments study the effect of Bphen and Bphen doping Cs2 CO3 on the OLED devices of luminescence brightness,current density and efficiency by changing the thick-ness of Bphen and the volume concentration of Cs2 CO3 doped in Bphen.Experimental results show that Bphen or Bphen∶Cs2 CO3 used as electron transport layer both can improve electronic injection and the performance of devices.Compared with the devices without Bphen,adding 25 nm thickness Bphen as electron transport layer can improve the device of electron injection,which increase the max-imum current efficiency by 1 12%.Adding 5 nm thickness Bphen:Cs2 CO3 (15% volume concentration doped)as electron transport layer can reduce the electron injection barrier,which increase the maxi-mum current efficiency by 27%.However,changing the doping layer thickness has little impact on the device‘s electron injection.This method can be used in cathode decorate of OLED devices and play a certain role in promoting the devices’performance.关键词
电子传输层/Bphen/Cs2 CO3/OLEDKey words
electronic transport layer/Bphen/Cs2 CO3/OLED分类
信息技术与安全科学引用本文复制引用
胡俊涛,程群,余承东,杨劲松,梅文娟,陆红波,王洁然..Bphen 掺杂 Cs2 CO3作为电子传输层对 OLED器件性能的影响[J].液晶与显示,2015,(6):943-948,6.基金项目
国家高技术研究发展计划(863计划)(No.2012AA011901) （863计划）
科技部973计划前研专项(No.2012CB723406) （No.2012CB723406）
国家自然科学基金(No.21174036) Supported by National High Technology Research and Development Program of China (No.2012AA011901) （No.21174036）
China Ministry of Science and Technology under Contract(No.2012CB723406) （No.2012CB723406）
Na-tional Natural Science Foundation of China(No.21174036) （No.21174036）
