中国电机工程学报Issue(21)：5685-5685,1.
2.5mΩ·cm2, 1750V 4H-SiC Junction Barrier Schottky Diodes With Floating Guard Ring Termination Structure
2.5mΩ·cm2, 1750V 4H-SiC Junction Barrier Schottky Diodes With Floating Guard Ring Termination Structure
摘要
关键词
4H-SiC/Junction Barrier Schottky/blocking voltage/specific on-resistance/floating guard ringKey words
4H-SiC/Junction Barrier Schottky/blocking voltage/specific on-resistance/floating guard ring引用本文复制引用
REN Na,SHENG Kuang..2.5mΩ·cm2, 1750V 4H-SiC Junction Barrier Schottky Diodes With Floating Guard Ring Termination Structure[J].中国电机工程学报,2015,(21):5685-5685,1.
