半导体学报（英文版）2015，Vol.36Issue(12)：34-37,4.DOI:10.1088/1674-4926/36/12/123002
Properties of n-type SnO2 semiconductor prepared by spray ultrasonic technique for photovoltaic applications
Properties of n-type SnO2 semiconductor prepared by spray ultrasonic technique for photovoltaic applications
H.Bendjedidi 1A.Attaf 1H.Saidi 1M.S.Aida 2S.Semmari 1A.Bouhdjar 1Y.Benkhetta1
作者信息
- 1. Laboratoire de Physique des Couches Minces et Applications,Université de Biskra,BP 145 RP,07000 Biskra,Algérie
- 2. Laboratoire des Couches minces et Interfaces,Université Mentouri,25000 Constantine,Algérie
- 折叠
摘要
关键词
tin oxide/thin films/spray ultrasonic/structural properties/optical propertiesKey words
tin oxide/thin films/spray ultrasonic/structural properties/optical properties引用本文复制引用
H.Bendjedidi,A.Attaf,H.Saidi,M.S.Aida,S.Semmari,A.Bouhdjar,Y.Benkhetta..Properties of n-type SnO2 semiconductor prepared by spray ultrasonic technique for photovoltaic applications[J].半导体学报（英文版）,2015,36(12):34-37,4.
