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Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature

Cholho Jang Ye Zhizhen Lü Jianguo

半导体学报（英文版）2015，Vol.36Issue(12)：38-41,4.

半导体学报（英文版）2015，Vol.36Issue(12)：38-41,4.DOI:10.1088/1674-4926/36/12/123003

Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature

Cholho Jang ¹Ye Zhizhen ²Lü Jianguo¹

作者信息

1. State Key Laboratory of Silicon Materials,Department of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China
2. Department of Materials Science,Kim Il Sung University,Pyongyang,D.P.R.of Korea
折叠

摘要

关键词

transparent electrode/electron beam evaporation/Cu grid/Ga doped ZnO

Key words

transparent electrode/electron beam evaporation/Cu grid/Ga doped ZnO

引用本文复制引用

Cholho Jang,Ye Zhizhen,Lü Jianguo..Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature[J].半导体学报（英文版）,2015,36(12):38-41,4.

基金项目

Project supported by the Key Project of the National Natural Science Foundation of China (No.91333203), the Program for Innovative Research Team in University of Ministry of Education of China (No.IRT13037), the National Natural Science Foundation of China (No.51172204), and the Zhejiang Provincial Department of Science and Technology of China (No.2010R50020). （No.91333203）

半导体学报（英文版）

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ISSN：1674-4926

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