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Design of novel DDSCR with embedded PNP structure for ESD protection

Bi Xiuwen Liang Hailian Gu Xiaofeng Huang Long

半导体学报(英文版)2015,Vol.36Issue(12):110-113,4.
半导体学报(英文版)2015,Vol.36Issue(12):110-113,4.DOI:10.1088/1674-4926/36/12/124007

Design of novel DDSCR with embedded PNP structure for ESD protection

Design of novel DDSCR with embedded PNP structure for ESD protection

Bi Xiuwen 1Liang Hailian 1Gu Xiaofeng 1Huang Long1

作者信息

  • 1. Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education),Department of Electronic Engineering,Jiangnan University,Wuxi 214122,China
  • 折叠

摘要

关键词

electrostatic discharge/dual-directional silicon controlled rectifier/trigger voltage/holding voltage/leakage current

Key words

electrostatic discharge/dual-directional silicon controlled rectifier/trigger voltage/holding voltage/leakage current

引用本文复制引用

Bi Xiuwen,Liang Hailian,Gu Xiaofeng,Huang Long..Design of novel DDSCR with embedded PNP structure for ESD protection[J].半导体学报(英文版),2015,36(12):110-113,4.

基金项目

Project supported by the Fundamental Research Funds for the Central Universities (No.JUSRP51323B), the Joint Innovation Project of Jiangsu Province (No.BY2013015-19), the Summit of the Six Top Talents Program of Jiangsu Province (No.DZXX-053), and the Graduate Student Innovation Program for Universities of Jiangsu Province (Nos.KYLX_1119, SJZZ_0148). (No.JUSRP51323B)

半导体学报(英文版)

OACSCDCSTPCDEI

1674-4926

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