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两种合成方法制得g-C3 N4的光催化性能

刘翀 张增凤 董永利 魏立国 罗海斌

黑龙江科技大学学报Issue(5):521-525,5.
黑龙江科技大学学报Issue(5):521-525,5.DOI:10.3969/j.issn.2095-7262.2015.05.012

两种合成方法制得g-C3 N4的光催化性能

Effect of two synthetic methods on photocatalytic properties of g-C3N4

刘翀 1张增凤 2董永利 1魏立国 1罗海斌1

作者信息

  • 1. 黑龙江科技大学 环境与化工学院,哈尔滨 150022
  • 2. 黑龙江科技大学 工程训练与基础实验中心,哈尔滨 150022
  • 折叠

摘要

Abstract

This paper is devoted to investigating how to overcome the notorious effect of the synthetic conditions on the photocatalytic performance of Graphite carbon nitride ( g-C3 N4 ) —a polymeric semicon-ductor which has become the hotspot in field of photocatalytic materials. This investigation consists of pre-paring ecarbon nitride by melamine at different temperatures under the condition of semi-closing and ar-gon shielding, respectively;characterizing its structural properties by XRD, FT-IR, UV-Vis and DRS;and evaluating its photocatalytic performance by SPS and photocatalytic degradation of phenol. The results show that, exposed to the rising synthetic temperature, the g-C3 N4 ’ s prepared under the semi-closing condition, exhibits a narrowed band gap, a red-shift in spectral absorption range, and no obviously weak-ened photocatalytic activity;subjected to the rising synthetic temperature, the g-C3 N4 ’ s prepared under the semi-closing condition, exhibits a significantly narrowed band gap, a greater red-shift in spectral ab-sorption range, and a remarkably weakened photocatalytic activity;and the synthesis of the g-C3 N4 with a higher sunlight utilization rate, a higher electrical conductivity and a higher photocatalytic activity is pos-sible with the condition of lower temperature and argon shielding.

关键词

g-C3 N4/合成/光催化性能

Key words

g-C3 N4/synthesis/photocatalytic performance

分类

通用工业技术

引用本文复制引用

刘翀,张增凤,董永利,魏立国,罗海斌..两种合成方法制得g-C3 N4的光催化性能[J].黑龙江科技大学学报,2015,(5):521-525,5.

基金项目

黑龙江省教育厅科学技术研究项目(12531581) (12531581)

黑龙江省自然科学基金项目(A201203) (A201203)

黑龙江科技大学学报

OACSTPCD

2095-7262

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