物理学报Issue(23)：238401-1-238401-9,9.DOI:10.7498/aps.64.238401
一个分数阶忆阻器模型及其简单串联电路的特性∗
A fractional-order memristor mo del and the fingerprint of the simple series circuits including a fractional-order memristor
摘要
Abstract
A memristor is a nonlinear resistor with time memory. The resistance of a classical memristor at a given time is represented by the integration of all the full states before the time instant, a case of ideal memory without any loss. Recent studies show that there is a memory loss of the HP TiO2 linear model, in which the width of the doped layer of HP TiO2 model cannot be equal to zero or the whole width of the model. Based on this observation, a fractional-order HP TiO2 memristor model with the order between 0 and 1 is proposed, and the fingerprint analysis of the new fractional-order model under periodic external excitation is made, thus the formula for calculating the area of hysteresis loop is obtained. It is found that the shape and the area enclosed by the hysteresis loop depend on the order of the fractional-order derivative. Especially, for exciting frequency being bigger than 1, the memory strength of the memristor takes its maximal value when the order is a fractional number, not an integer. Then, the current-voltage characteristics of the simple series one-port circuit composed of the fractional-order memristor and the capacitor, or composed of the fractional-order memristor and the inductor are studied separately. Results demonstrate that at the periodic excitation, the memristor in the series circuits will have capacitive properties or inductive properties as the fractional order changes.关键词
忆阻器/滞回线/记忆损失/分数阶导数Key words
memristor/hysteresis loop/memory loss/fractional-order derivative引用本文复制引用
俞亚娟,王在华..一个分数阶忆阻器模型及其简单串联电路的特性∗[J].物理学报,2015,(23):238401-1-238401-9,9.基金项目
国家自然科学基金(批准号11372354)资助的课题 （批准号11372354）
