半导体学报（英文版）2016，Vol.37Issue(1)：47-50,4.DOI:10.1088/1674-4926/37/1/014003
Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys
Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys
Tangudu Bharat Kumar 1Bahniman Ghosh 2Bhaskar Awadhiya 3Ankit Kumar Verma4
作者信息
- 1. Department of Electronics and Communications, Malaviya National Institute of Technology, Jaipur, India
- 2. Microelectronics Research Center, 10100 Burnet Road, Bldg.160, University of Texas at Austin, Austin, TX, 78758, USA
- 3. Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, India
- 4. Department of Electronics and Communications, Manipal Institute of Technology, Manipal University, Manipal, India
- 折叠
摘要
关键词
spin transfer torque random access memory (STT-MRAM)/micromagnetic simulation/Heusler compound/switching time/critical switching current densityKey words
spin transfer torque random access memory (STT-MRAM)/micromagnetic simulation/Heusler compound/switching time/critical switching current density引用本文复制引用
Tangudu Bharat Kumar,Bahniman Ghosh,Bhaskar Awadhiya,Ankit Kumar Verma..Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys[J].半导体学报（英文版）,2016,37(1):47-50,4.
