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Investigation of aluminum gate CMP in a novel alkaline solution

Feng Cuiyue Liu Yuling Sun Ming Zhang Wenqian Zhang Jin Wang Shuai

半导体学报（英文版）2016，Vol.37Issue(1)：137-144,8.

半导体学报（英文版）2016，Vol.37Issue(1)：137-144,8.DOI:10.1088/1674-4926/37/1/016002

Investigation of aluminum gate CMP in a novel alkaline solution

Feng Cuiyue ¹Liu Yuling ¹Sun Ming ¹Zhang Wenqian ¹Zhang Jin ¹Wang Shuai¹

作者信息

1. Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China
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摘要

关键词

alkaline solution/aluminum/CMP/electrochemical/surface micromorphology

Key words

alkaline solution/aluminum/CMP/electrochemical/surface micromorphology

引用本文复制引用

Feng Cuiyue,Liu Yuling,Sun Ming,Zhang Wenqian,Zhang Jin,Wang Shuai..Investigation of aluminum gate CMP in a novel alkaline solution[J].半导体学报（英文版）,2016,37(1):137-144,8.

半导体学报（英文版）

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ISSN：1674-4926

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